advanced power n-channel enhancement mode electronics corp. power mosfet fast switching characteristic bv dss 150v lower gate charge r ds(on) 2.6 small footprint & low profile package i d 0.57a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice 201005033 thermal data parameter storage temperature range total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.016 continuous drain current 3 , v gs @ 10v 0.45 pulsed drain current 1 2 gate-source voltage + 20 continuous drain current 3 , v gs @ 10v 0.57 parameter rating drain-source voltage 150 1 AP2608GY rohs-compliant product g d s advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the s0t-26 package is widely used for commercial-industrial surface mount applications. d d d d g s sot-26
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 150 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =0.5a - - 2.6 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =0.6a - 0.6 - s i dss drain-source leakage current v ds =150v, v gs =0v - - 25 ua drain-source leakage current (t j =70 o c) v ds =120v ,v gs =0v - - 100 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =0.5a - 3 4.8 nc q gs gate-source charge v ds =120v - 0.5 - nc q gd gate-drain ("miller") charge v gs =10v - 0.7 - nc t d(on) turn-on delay time 2 v ds =75v - 7.4 - ns t r rise time i d =0.5a - 6.5 - ns t d(off) turn-off delay time r g =3.3 ,v gs =10v - 58 - ns t f fall time r d =150 -26- ns c iss input capacitance v gs =0v - 80 130 pf c oss output capacitance v ds =25v - 17 - pf c rss reverse transfer capacitance f=1.0mhz - 3.7 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.3a, v gs =0v - - 1.5 v t rr reverse recovery time 2 i s =1a, v gs =0v, - 57 - ns q rr reverse recovery charge di/dt=100a/s - 120 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board t Q 10s ; 156 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP2608GY
AP2608GY fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. normalized gate threshold reverse diode voltage v.s. junction temperature 3 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) (v) 0 0.4 0.8 1.2 1.6 2 2.4 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 5.0v 4.5v v g =3.0v t a =25 o c 0 0.4 0.8 1.2 1.6 0 4 8 12 16 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =0.5a v g =10v 0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v)
AP2608GY fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 q v g 10v q gs q gd q g charge 1 10 100 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 156 /w t t 0 2 4 6 8 10 12 01234 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =120v i d =0.5a 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% 0.02 operation in this area limited by r ds(on)
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